Hexagonal boron nitride enables the fabrication of 2-dimensional electronic memories

(Lanzalab) The research group lead by Professor Mario Lanza (Soochow University, China) reports the synthesis of resistive random access memories made of graphene electrodes and multilayer hexagonal boron nitride as dielectric. The findings, published recently in Advanced Functional Materials, pave the way towards the development of advanced two-dimensional electronic memories.

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